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SFDSC (Safety Dual Side Cooling 1200V SiC MOSFET)

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SFDSC (Safety Dual Side Cooled) Power Module - Generation 1
JW1R05M12SFDSC-G1
  • VDS = 1200V, ID = 300A (Tj=100°C), Rds(on) = 5mΩ
  • Employs 3D Clip Technology for high reliability : AQG324
  • SFDSC-3PL structure by adopting 1200V, 14mΩ Wolfspeed Chip: AEC Q101 Qualification
  • SFDSC-3PL : Saftey Dual Side Cooling Power Module Three Power Lead
The innovative and small package is designed for Dual Sided Cooling with great thermal performance.
The low stray inductance and increased blocking voltage support the design of systems with a very high efficiency.
Using 1200V 14mΩ SiC MOSFET. The SiC MOSFET employs a Wolfspeed device.

SFPAK (Safey Power Package)-3L / 4L,
SFPAK-4DL/ PlusD-4L

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SFDSC (Safety Dual Side Cooled) Power Module -Generation 1 JW1R05M12SFDSC-G1
  • Reduced Ringing / Fast and More Efficient Switching
  • Low Conduction Losses at all Temperature / Compatible with Gate Drivers
  • Better Power Density and System Efficiency / Lower capacitance
  • Higher system efficiency / Lower thermal impedance / Lower Qg
Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied, it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package, it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for High Voltage Solution as shown in the above figure.

JEQ-1921 EconoDual Like Power Module Package

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JEQ-1921 EconoDual Like Power Module Package
S450A17P01 / S300A17P01 / S160A17P01
  • VDS =1700V, ID =450A, Rds(on)=2.5mΩ / VDS =1700V, ID =300A, Rds(on)=5mΩ / VDS =1700V, ID =160A, Rds(on)=10mΩ
  • Low surge, low switching loss, low stray Inductance
  • High- speed switching possible
  • Reduced temperature dependence
  • Isolated base plate / Standard housing / High power density
complete SiC half bridge module composed of SiC MOSFET. It includes low package stray inductance of less than 12nH and insulation of 4kV. It is an optimal product for inverters and converters of industrial power sources, including evaluation devices such as outdoor power generation systems and charge / discharge testers.

CIB Module employs Press Fit Technology

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  • High speed switching with SiC MOSFET / Compact and low stray Inductance
  • Reliable body diode / Built-in NTC
  • 1600V Fast Recovery Diode for Rectifier
  • 1200V Field Stop Trench IGBT for Brake / 1200V Fast Recovery Diode for Brake
The CIB is a product that integrates a 3-phase inverter circuit with 1200V SiC MOSFET, a diode bridge circuit of 1600V and a braking circuit into a single module, making it possible to create a compact design for the main circuit. We have prepared a product lineup to meet various requirements for the module terminal and printed circuit board connections, including the two types of connectivity such as solderable pin connector or solderless press fit pin.

Six-PAK (1200V 30mΩ Power Module)

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1200V 30mΩ six-PAK Power Module Package
JG1R30M12SP
  • High speed switching with SiC MOSFET
  • Reliable body diode / Compact and low stray Inductance
  • Built-in NTC / Blocking Voltage 1200V with SiC MOSFET
  • Short time extended Operation Temperature Tjop=175°C
  • 2.5KV AC 1min Insulation
Equipped with six-SiC, which usually have 1200V blocking voltage capability.
Nearly all modules are equipped with an NTC alongside the power semiconductors.
Power modules with a six-PAK topology are most frequently used as inverters in frequency converters for motors.
The six-PAK is a product that integrates a 3-phase inverter circuit into a single module, making it possible to create a compact design for the main circuit. solderless terminals are available for connection to the module terminal and the printed circuit board.

SPPAK - 2BN/P for LLC Resonant and Boost Converter

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